TOSHIBA Field Effect Transistor  Silicon P Channel MOS Type
2SJ200
High Power Amplifier Application
z  High breakdown voltage
: V DSS  = −180 V z  High forward transfer admittance : |Y fs | = 4.0 S (typ.)
z  Complementary to 2SK1529
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Symbol Rating
Unit Drain −source voltage V DSS  −180 V Gate −source voltage V GSS  ±20 V Drain current
(Note 1)
I D
−10 A Drain power dissipation (Tc = 25°C) P D  120 W Channel temperature T ch  150 °C Storage temperature range
T stg
−55~150 °C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Unit: mm
1. GATE
2. DRAIN (HEAT SINK)
3. SOURCE
JEDEC ― JEITA
―
TOSHIBA 2-16C1B
Weight: 4.6 g (typ.)
Electrical Characteristics (Ta = 25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Drain cut −off current I DSS  V DS  = −180 V, V GS  = 0 ― ―
−1.0
mA Gate leakage current
I GSS  V DS  = 0, V GS  = ±20 V ― ― ±0.5μA
Drain −source breakdown voltage
V  (BR) DSS
I D  = −10 mA, V GS  = 0
−180 ― ― V Gate −source cut −off voltage
(Note 2) V GS (OFF) V DS  = −10 V, I D  = −0.1 A
−0.8 ― −2.8V Drain −source saturation voltage  V DS (ON)
I D  = −6 A, V GS  = −10 V
―
−1.5
−5.0
V
Forward transfer admittance |Y fs | V DS  = −10 V, I D  = −3 A ― 4.0 ― S Input capacitance C iss  V DS  = −30 V, V GS  = 0, f = 1 MHz ― 1300 ― Output capacitance
C oss  V DS  = −30 V, V GS  = 0, f = 1 MHz ― 350 ― Reverse transfer capacitance
C rss
V DS  = −30 V, V GS  = 0, f = 1 MHz
― 200 ―
pF
Note 1: Please use devices on condition that the channel temperature is below 150°C. Note 2: V GS (OFF) Classification O: −0.8~−1.6, Y: −1.4~−2.8
This transistor is an electrostatic sensitive device. Please handle with caution.
Marking
Switching Time Test Circuit Waveforms
RESTRICTIONS ON PRODUCT USE
20070701-EN •The information contained herein is subject to change without notice.
•TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.
• The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”).  Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk.
•The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations.
• The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties.
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