专利名称：EDMOS device having a lattice type drift
region and method of manufacturing the
same
发明人：Dae Woo Lee,Tae Moon Roh,Il Yong Park,Yil
Yuk Yang,Jong Dae Kim
申请号：US10611502
申请日：20030630
公开号：US20040002196A1
公开日：
20040101
专利附图：
摘要：The present invention provides an EDMOS (extended drain MOS) device having a
lattice type drift region and a method of manufacturing the same. In the case of n channel EDMOS(nEDMOS), the drift region has a lattice structure in which an n lattice having a high concentration and a p lattice having a low concentration are alternately arranged. As a drain voltage is applied, a depletion layer is abruptly extended by a pn junction of the n lattice and the p lattice, so that the entire drift region is easily depleted. Therefore, a breakdown voltage of the device is increased, and an on resistance of the device is decreased due to the n lattice with high concentration.
soojoo申请人：LEE DAE WOO,ROH TAE MOON,PARK IL YONG,YANG YIL YUK,KIM JONG DAE 更多信息请下载全文后查看