专利名称：Denkaikokatoranjisutaoyobisonoseizohoho 发明人：OKAMURA SHIGERU
申请号：JP22152484
申请日：19841022
公开号：JPH0228254B2
公开日：
19900622
摘要：PURPOSE:To improve the integration degree of an analog IC and to obtain an FET, which can perform nonlinear amplification, by changing the carrier concentration of each channel region and the depth of the region along the direction of the width of a gate by an ion implanting method utilizing a converged ion beam. CONSTITUTION:In an ion implanting method utilizing a converged ion beam, an implanting device, which can obtain a spot diameter of about 0.1mum at the minimum, is used. Each region of a substrate 1 is scanned at a different speed, and Si in a different amount of dose is implanted. In the substrate 1, the following regions are formed: the first region 2a with carrier concentration of about 1X10<17>; the second region 2b with carrier concentration of about 2X10<17>; and the third region 2c with carrier concentration of about 3X10<17>. In the regions forming first - third channel regions 102a, 102b and 102c of the substrate 1, specified dosing amounts of Si<+> are implanted by the scanning of the converged ion beams having different acceleration energies. The N type channel region 102a has a depth of about 50Angstrom . The N-channel region 102b has the depth of about 750Angstrom . The N-channel region 102c has the depth of about
1,000Angstrom . Thus the FET, whose conductance is changed in correspondence with the gate voltage, and which has a nonlinear amplifying function, can be provided.
soojoo申请人：FUJITSU LTD
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