专利名称：Gap-fill techniques
发明人：Kevin Mikio Mukai,Kimberly Branshaw,Zheng
Yuan,Xinyun Xia,Xiaolin Chen,Dongqing Li,M.
Ziaul Karim,Van Ton,Cary Ching,Steve
Ghanayeim,Nitin K. Ingle
申请号：US10746695
申请日：20031223
公开号：US20050136684A1
公开日：
20050623
专利附图：
摘要：A variety of techniques may be employed, separately or in combination, to
improve the gap-filling performance of a dielectric material formed by chemical vapor deposition (CVD). In one approach, a first dielectric layer is deposited using sub-atmospheric chemical vapor deposition (SACVD), followed by a second dielectric layer deposited by high density plasma chemical vapor deposition (HDP-CVD) or plasma-enhanced chemical vapor deposition (PECVD). In another approach, a SACVD dielectric layer is deposited in the presence of reactive ionic species flowed from a remote plasma chamber into the processing chamber, which performs etching during the deposition process. In still another approach, high aspect trenches may be filled utilizing SACVD in combination with oxide layers deposited at high temperatures.
申请人：Kevin Mikio Mukai,Kimberly Branshaw,Zheng Yuan,Xinyun Xia,Xiaolin
Chen,Dongqing Li,M. Ziaul Karim,Van Ton,Cary Ching,Steve Ghanayeim,Nitin K. Ingle 地址：Santa Clara CA US,Santa Clara CA US,Fremont CA US,San Jose CA US,San Jose CA US,Santa Clara CA US,San Jose CA US,San Jose CA US,Sunnyvale CA US,Los Altos CA US,Campbell CA US
国籍：US,US,US,US,US,US,US,US,US,US,US
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