专利名称：Metal-organic (MO) chemical vapor
deposition method and MO chemical vapor
deposition reactor
发明人：Jae-Hyun Joo
申请号：US09189800
soojoo
申请日：19981112
公开号：US06180541B2
公开日：
20010130
专利附图：
摘要：A method for forming a thin film on a surface of a semiconductor device
includes vaporizing a metal-organic source, preheating a carrier gas, carrying the
vaporized metal-organic source to a reaction unit using the preheated carrier gas, and reacting the metal-organic source with a reactant gas to form the thin film on the surface of the semiconductor device in the reaction unit by a chemical vapor deposition process.
代理机构：Morgan, Lewis & Bockius LLP
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