2SJ222
Silicon P-Channel MOS FET
Application
High speed power switching
Features
• Low on-resistance
• High speed switching
• Low drive current
•    4 V gate drive device
Can be driven from 5 V source
• Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline
2SJ222
2
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol Ratings Unit Drain to source voltage V DSS –100V Gate to source voltage V GSS ±20V Drain current I D
–20A Drain peak current
I D(pulse)*1–80A Body to drain diode reverse drain current I DR –20A Channel dissipation Pch*235W Channel temperature Tch 150°C Storage temperature
–55 to +150
°C
Notes:  1.PW ≤ 10 µs, duty cycle ≤ 1%
2.Value at T C  = 25°C
2SJ222
3
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min Typ Max Unit Test conditions Drain to source breakdown voltage
V (BR)DSS –100——V I D  = –10 mA, V GS  = 0Gate to source breakdown voltage
V (BR)GSS ±20——V I G  = ±100 µA, V DS  = 0Gate to source leak current I GSS ——±10µA V GS  = ±16 V, V DS  = 0Zero gate voltage drain current I DSS
——–250µA V DS  = –80 V, V GS  = 0Gate to source cutoff voltage V GS(off)–1.0—–2.0V I D  = –1 mA, V DS  = –10 V Static drain to source on state R DS(on)
—0.120.16Ω
I D  = –10 A, V GS  = –10 V*1resistance
—0.160.22I D  = –10 A, V GS  = –4 V*1Forward transfer admittance |y fs |7.512—S I D  = –10 A, V DS  = –10 V*1Input capacitance Ciss —1800—pF V DS  = –10 V, V GS  = 0,Output capacitance
Coss —680—pF    f = 1 MHz
Reverse transfer capacitance Crss —145—pF Turn-on delay time t d(on)—15—ns I D  = –10 A, V GS  = –10 V,Rise time
t r —115—ns R L  = 3 Ω
Turn-off delay time t d(off)—320—ns Fall time
t f —170—ns Body to drain diode forward voltage
V DF —–1.05—V I F  = –20 A, V GS  = 0Body to drain diode reverse recovery time t rr
—
280
—
ns
I F  = –20 A, V GS  = 0,di F /dt = 50 A/µs Note:
1.Pulse test
See characteristic curves of 2SJ221
2SJ222
4
Cautions
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intellectual property rights, in connection with use of the information contained in this document.2.Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use.
3.Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,contact Hitachi’s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,traffic, safety equipment or medical equipment for life support.
4.Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics.  Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges.  Even within the guaranteed ranges, consider normally foreseeable fail
ure rates or failure modes in semiconductor devices and employ systemic measures such as fail-safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product.5.This product is not designed to be radiation resistant.
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7.Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products.
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