2SJ352中⽂资料
2SJ351, 2SJ352
Silicon P-Channel MOS FET
ADE-208-143
1st. Edition
Application
Low frequency power amplifier
Complementary pair with 2SK2220, 2SK2221
Features
High power gain
Excellent frequency response
High speed switching
Wide area of safe operation
Enhancement-mode
Good complementary characteristics
Equipped with gate protection diodes
Ordering Information
Type No.Vsj成员资料
DSX
2SJ351–180 V
2SJ352–200 V
2SJ351, 2SJ352
2
Outline
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol Ratings Unit Drain to source voltage 2SJ351V DSX
–180V
2SJ352
–200Gate to source voltage V GSS ±20V Drain current
I D –8A Body to drain diode reverse drain current I DR –8A Channel dissipation Pch*1100W Channel temperature Tch 150°C Storage temperature Tstg –55 to +150
°C Note:
1.Value at T C = 25°C
2SJ351, 2SJ352
3
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min Typ Max Unit Test conditions Drain to source 2SJ351V (BR)DSX
–180——V
I D = –10 mA, V GS = 10 V
breakdown voltage
2SJ352
–200——Gate to source breakdown voltage
V (BR)GSS ±20——V I G = ±100 µA, V DS = 0Gate to source cutoff voltage V GS(off)–0.15—–1.45V I D = –100 mA, V DS =–10 V Drain to source saturation voltage
V DS(sat)——–12V I D = –8 A, V GD = 0*1Forward transfer admittance |y fs |0.7 1.0 1.4S I D = –3 A, V DS = –10 V*1Input capacitance Ciss —800—pF V GS = 5 V, V DS = –10 V,Output capacitance
Coss —1000—pF f = 1 MHz
Reverse transfer capacitance Crss —18—pF Turn-on time t on —320—ns V DD = –30 V, I D = –4 A Turn-off time t off
—
120
—
ns
Note:
1.Pulse test
2SJ351, 2SJ352
4
2SJ351, 2SJ352
6
Hitachi Code
JEDEC
EIAJ
Weight (reference value)TO-3P
—
Conforms
5.0 g
Unit: mm
Cautions
1.Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.2.Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use.
3.Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,contact Hitachi’s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,traffic, safety equipment or medical equipment for life support.
4.Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other co
nsequential damage due to operation of the Hitachi product.5.This product is not designed to be radiation resistant.
6.No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi.
7.Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products.
Hitachi, Ltd.
Semiconductor & Integrated Circuits.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.
Hitachi Asia Pte. Ltd.16 Collyer Quay #20-00Hitachi Tower
Singapore 049318Tel: 535-2100Fax: 535-1533
URL
NorthAmerica : http:www.doczj/doc/bfe7be20915f804d2b16c12b.html /Europe :
www.doczj/doc/bfe7be20915f804d2b16c12b.html /hel/ecg Asia (Singapore):
www.doczj/doc/bfe7be20915f804d2b16c12b.html .sg/grp3/sicd/index.htm Asia (Taiwan):
www.doczj/doc/bfe7be20915f804d2b16c12b.html /E/Product/SICD_Frame.htm Asia (HongKong):
www.doczj/doc/bfe7be20915f804d2b16c12b.html /eng/bo/grp3/index.htm Japan :
jp/Sicd/indx.htm
Hitachi Asia Ltd.Taipei Branch Office
3F, Hung Kuo Building. No.167, Tun-Hwa North Road, Taipei (105)Tel: <886> (2) 2718-3666Fax: <886> (2) 2718-8180 Hitachi Asia (Hong Kong) Ltd.
Group III (Electronic Components)
7/F., North Tower, World Finance Centre,Harbour City, Canton Road, Tsim Sha Tsui,Kowloon, Hong Kong Tel: <852> (2) 735 9218Fax: <852> (2) 730 0281 Telex: 40815 HITEC HX
Hitachi Europe Ltd.
Electronic Components Group.Whitebrook Park
Lower Cookham Road Maidenhead
Berkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000Fax: <44> (1628) 778322
Hitachi Europe GmbH
Electronic components Group Dornacher Stra§e 3
D-85622 Feldkirchen, Munich Germany
Tel: <49> (89) 9 9180-0Fax: <49> (89) 9 29 30 00Hitachi Semiconductor (America) Inc.
179 East Tasman Drive,San Jose,CA 95134 Tel: <1> (408) 433-1990Fax: <1>(408) 433-0223
For further information write to: